Описание
Features
Designed for highly penetrating charged particles measurements at room temperature
Better stopping power than implanted silicon PIPS detectors: up to 3 MeV Betas, 30 MeV protons, 140 MeV Alphas. More if detectors are stacked
Designs for LN2 cooled applications like conversion electron spectroscopy
As an option:
Thin back contact available (transmission option) for the dE/dx measurement or stack arrangement with connector on the side
Special dimensions, shapes, connectors
Designed for highly penetrating charged particles measurements at room temperature
Better stopping power than implanted silicon PIPS detectors: up to 3 MeV Betas, 30 MeV protons, 140 MeV Alphas. More if detectors are stacked
Designs for LN2 cooled applications like conversion electron spectroscopy
As an option:
Thin back contact available (transmission option) for the dE/dx measurement or stack arrangement with connector on the side
Special dimensions, shapes, connectors
Segmentation: pixels or strip / single or double sided
Description
ROOM TEMPERATURE Si(Li) DETECTORS
Description
- As a standard two active areas 200 mm2 and 500 mm2
- As a standard two thicknesses 2 mm and 5 mm.
- Other dimensions or shapes are available on request
- Gold entrance window 0.2 μm equivalent silicon
- Lithium back contact 300 μm. As an option a thin 50μm contact is possible for transmission mode (deltaE) )
- Circular Stainless Steel mounts
- SMA female connector at the back of the housing
Operation
- The detectors can be operated either under vacuum or atmospheric pressure
- They must be used in darkness
- Maximum count rate 100 k count per sec at 524 keV electrons
Технические характеристики

Поддержка